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triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 1 12-18 ghz ku-band 2-stage driver amplifier TGA2506 key features ? 12-18 ghz bandwidth ? 17 db nominal gain ? > 14 dbm p1db ? bias: 5,6,7 v, 40 10% ma self bias ? 0.5 um 3mi mmw phemt technology ? chip dimensions: 1.19 x 0.83 x 0.1 mm (0.047 x 0.031 x 0.004) in primary applications ? point to point radio ? military ku-band ? space ku-band ? vsat preliminary measured data bias conditions: vd = 6 v, id = 40 ma orl 0 2 4 6 8 10 12 14 16 11 12 13 14 15 16 17 18 frequency (ghz) p1db (dbm) irl gain 8 10 12 14 16 18 20 8 10121416182022 frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 return loss (db) note: datasheet is subject to change without notice.
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 2 table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 8 v 2/ i + positive supply current (quiescent) 57 ma 2/ p in input continuous wave power 20 dbm p d power dissipation 0.45 2/ 3 / t ch operating channel temperature 150 0 c4 / 5 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ when operated at this bias condition with a base plate temperature of 70 0 c, the median life is reduced to 1e+7 hrs. 4/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 5/ these ratings apply to each individual fet. TGA2506 table ii dc probe tests (t a = 25 c nominal) symbol parameter minimum maximum value v bvgs2 breakdown voltage gate-source -30 -11 v v bvgd2 breakdown voltage gate-drain -30 -11 v v p2 pinch-off voltage -1.5 -0.3 v
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 3 table iii electrical characteristics (ta = 25 0 c, nominal) TGA2506 parameter typical units drain operating 6 v quiescent current 40 10% self bias ma small signal gain 17 db input return loss 15 db output return loss 15 db output power @ 1 db compression gain 14 dbm noise figure (@ mid-band) 5.5 db table iv thermal information parameter test conditions t ch ( o c) r jc ( c/w) t m (hrs) r jc thermal resistance (channel to case) vd = 6 v id = 40 ma pdiss = 0.24 w 99 121 1.4e+8 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 o c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated.
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 4 10 11 12 13 14 15 16 17 18 19 20 11 12 13 14 15 16 17 18 19 frequency (ghz) gain (db) TGA2506 preliminary measured data bias conditions: vd = 5, 6, 7 v, id = 40 ma 4 6 8 10 12 14 16 18 20 22 24 11 12 13 14 15 16 17 18 19 frequency (ghz) gain over temperature (db) - 40 0 c + 70 0 c bias conditions: vd = 6 v, id = 40 ma 7v 6v 5v + 25 0 c
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 5 TGA2506 preliminary measured data bias conditions: vd =5, 6, 7 v, id = 40 ma -40 -35 -30 -25 -20 -15 -10 -5 0 11 12 13 14 15 16 17 18 19 frequency (ghz) input return loss (db) -40 -35 -30 -25 -20 -15 -10 -5 0 11 12 13 14 15 16 17 18 19 frequency (ghz) output return loss (db) 7v 6v 5v 5v 6v 7v
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 6 preliminary measured data bias conditions: vd = 5, 6, 7 v, id = 40 ma TGA2506 10 11 12 13 14 15 16 17 18 19 20 12 13 14 15 16 17 18 frequency (ghz) pout @ 1db gain compression (dbm) -10 -5 0 5 10 15 20 -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 -5 -3 -1 1 pin (dbm) pout (dbm) 13 14 15 16 17 18 19 power gain (db) bias conditions: vd = 5, 6, 7 v, id = 40 ma, frequency @ 15ghz 7v 6v 5v 5v 6v 7v
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 7 preliminary measured data bias conditions: vd = 6 v, id = 40 ma TGA2506 0 5 10 15 20 25 30 123456789101112 output power per tone (dbm) oip3 (dbm) 5 10 15 20 25 30 35 40 123456789101112 output power per tone (dbm) oip3 (dbm) frequency @ 12 ghz frequency @ 14 ghz
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 8 preliminary measured data TGA2506 bias conditions: vd = 6 v, id = 40 ma 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 12 13 14 15 16 17 frequency (ghz) noise figure (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 9 mechanical drawing TGA2506 gaas mmic devices are susceptible to damage from el ectrostatic discharge. pr oper precautions should be observed during handling, assembly and test.
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 10 chip assembly diagram TGA2506 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. this configuration is for a self-bias logic pad current search with connection for bin # 1 . see table iv for alternate bin # to get the current typical of 40 10% ma. table iv pad connections bin no. connection 1 pad 4 to pad 5 2 pad 4 to pad 6 3 pad 4 to pad 7 4 pad 4 to pad 8
triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com product data sheet august 5, 2008 11 assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. TGA2506 reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c (30 seconds max). ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 ? c.

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